bsp 365 semiconductor group page 1 of 6 05.03.96 minismart high-side switch short-circuit protection overtemperature protection with hysteresis overload protection overvoltage protection reverse battery protection 1 ) switching inductive load clamp of negative output voltage with inductive loads maximum current internally limited package: sot 223 type ordering code bsp 365 q67050-m1 maximum ratings parameter symbol values unit supply voltage v bb 65 v load current self-limited i l i l ( sc ) a maximum current through input pin (dc) see internal circuit diagram i in 15 ma inductive load switch-off energy dissipation e as 5mj operating temperature range storage temperature range t j t stg -40 ...+150 -55 ...+150 c max. power dissipation (dc) 2) t a = 25 c p tot 1.7 w thermal resistance chip - soldering point: chip - ambient: 2 ) r thjs r thja 17 72 k/w in r in + v bb esd mini-profet out logic voltage source charge pump level shifter temperature sensor rectifier limit for unclamped ind. loads gate protection current limit 1 2/4 3 load gnd load v logic overvoltage protection i 1 ) for 12 v applications only. reverse load current only limited by connected load. 2 ) bsp 365 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm 2 copper area for v bb connection 1 2 3 4 pins: 123 4 in v bb out v bb
bsp 365 semiconductor group page 2 05.03.96 electrical characteristics parameter and conditions symbol values unit at t j = 25 c, v bb = 24 v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (pin 2 to 3) i l = 100 ma, pin 1 = gnd t j = 25c t j = 150c i l = 50 ma, v bb = 4,9 v, t j = 25c r on -- -- -- 4 8 -- 5 10 15 w nominal load current (pin 2 to 3) iso standard: v on = v bb - v out = 0.5 v t s = 85 c i l(iso) 0.07 -- -- a turn-on time to 90% v out turn-off time to 10% v out r l = 270 w t on t off -- -- 60 70 100 100 m s slew rate on 10 to 30% v out , r l = 270 w d v /dt on -- 4 6 v/ m s slew rate off 70 to 40% v out , r l = 270 w -d v /dt off -- 2 6 input off state input current t j = - 40...+150c r l = 270 w, v out 0,1v i in(off) -- -- 0.05 ma on state input current, (pin 1 grounded) 3 ) t j = - 40...+150c i in(on) -- 0.35 1 ma operating parameters operating voltage (pin 1 grounded) 4 ) t j = - 40...+150c v bb(on) 4.9 -- 60 v leakage current (pin 2 to 3, pin 1 open) t j = - 40...+150c v bb = 60 v, t j = - 40...+150c i bb(off) -- -- 1.2 -- 10 60 m a 3 ) driver circuit must be capable to drive currents > 1ma. 4 ) below v bb =4.5 v typ. without chargepump, v out ? v bb - 2 v
bsp 365 semiconductor group page 3 05.03.96 parameter and conditions symbol values unit at t j = 25 c, v bb = 24v unless otherwise specified min typ max protection functions current limit (pin 2 to 3) 5 ) t j = 25c t j = -40...+150 i l(sc) 0.2 0.2 0.5 -- 1 1.2 a thermal overload trip temperature t jt 150 -- -- c thermal hysteresis d t jt -- 10 -- k overvoltage protection t j =-40...+150c v bbin(az) 65 72 -- v output clamp (ind. load switch off) at v out = v bb - v on(cl) v on(cl) -- 72 -- v inductive load switch-off energy dissipation 6 ) e as -- -- 5mj reverse battery resistor (pin 1 to 2) r in -- 1--k w reverse diode continious reverse drain current t j = 25c i s -- -- 0.2 a pulsed reverse drain current t j = 25c i sm -- -- 0.8 a diode forward on voltage i f = 0.2 a, i in = 0.05 ma v sd -- 0.9 1.2 v 5 ) load current limits onset at i l * r on approx. 1v short circuit protection: combination of current limit and thermal overload switch off 6 ) while demagnetizing load inductance, dissipated energy is e as = (v on(cl) * i l (t) dt, approx. e as = 1 / 2 * l * i 2 l * ( v on(cl) v on(cl) -v bb )
bsp 365 semiconductor group page 4 05.03.96 max allowable power dissipation p tot = f (t a ,t sp ) p tot [w] 0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 150 t a sp t t a , t sp [c] on state resistance (vbb- pin to out pin) r on = f (t j ); v bb = 13.5 v;i l = 70 ma r on [ w ] 0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 98% typ. t j [c] typ. on state resistance (vbb- pin to out pin) r on = f (v bb ); i l = 70 ma; t j = 25c r on [ w ] 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 v bb [v] typ. short circuit current i l(sc) = f(t j ); v bb = 13.5v i lsc [ a ] 0 0.1 0.2 0.3 0.4 0.5 0. 6 -50 -25 0 25 50 75 100 125 150 t j [c]
bsp 365 semiconductor group page 5 05.03.96 typ. short circuit current i l(sc) = f(v on ); v bb = 13.5v; t j = 25c i lsc [ a ] 0 0.1 0.2 0.3 0.4 0.5 0246810 v on [v] typ. short circuit current i l(sc) = f(t); v bb = 13.5v no heatsink; parameter: t jstart i l(sc) [a] 0 0.1 0.2 0.3 0.4 0.5 0.6 -20246810121416 125 c 25 c -40 c t[s] test circuit v v in v b b i in 2/4 1 3 out v on turn on conditions chargepump threshold v on = f (v bb ) typ. max. 2 468 2 4
bsp 365 semiconductor group page 6 05.03.96 package: all dimensions in mm. sot 223/3: edition 7.97 published by siemens ag, bereich halbleiter vetrieb, werbung, balanstra?e 73, 81541 mnchen ? siemens ag 1997 all rights reserved. attention please! as far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. the information describes a type of component and shall not be considered as warranted characteristics. terms of delivery and rights to change design reserved. for questions on technology, delivery and prices please contact the semiconductor group offices in germany or the siemens companies and representatives worldwide (see address list). due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest siemens office, semiconductor group. siemens ag is an approved cecc manufacturer. packing please use the recycling operators known to you. we can also help you - get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or systems must be expressly authorized for such purpose! critical components 1 of the semiconductor group of siemens ag, may only be used in life-support devices or systems 2 with the express written approval of the semiconductor group of siemens ag. 1) a critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2) life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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